Ferroelectric Memory GX85RS2MC (FM25V20A) Application Program in FPGAs

Most of the existing commercial FPGAs are programmed based on SRAM architecture, but its biggest defect is the volatility of the stored information after power loss (e.g., EPROM), which is solved by reloading the programmed information at each working time, but it not only consumes the hardware resources, but also brings another problem of the confidentiality of the programmed information, which makes it necessary to study about the built-in non-volatile FPGAs, and this paper mainly mentions a new idea of FPGA based on ferroelectric memory programming and introduces the advantages of its performance characteristics in programming.

Ferroelectric memory GX85RS2MC it is through the ferroelectric process and silicon gate CMOS process technology to form a non-volatile storage unit, which has a high reliability, data retention time of 100 years, completely random does not need to write wait for high read and write efficiency, SPI interface rate can support up to 25Mhz operating frequency, and has a very low power consumption; because of its special ferroelectric material, so Due to its special ferroelectric material, the memory can be erased or written up to 1E6 read/write operations*1.

GX85RS2MC parameters are as follows:

-Capacity: 2M bit, SPI interface is provided;

-Operating frequency is 25 MHz;

-Data retention: 10 years @ 85°C (200 years @ 25°C);

-High-speed read characteristics: supports 40MHz high-speed read command;

-Operating ambient temperature range: -40℃ to 85℃;

-Package form: 8-pin SOP package, RoHS compliant;

-Performance compatible with Fujitsu and Cypress;