GX85RS2MC Compatible with FM25V20A in Instrumentation Design

In meter design, the safe storage of data is very important. Such as electronic power meter, it is always recording data during operation, if the function design is more, then the amount of data saved is large, and the number of times of erase and write is more. Generally need to have a high-performance memory to meet the demand.

In the engineers in the design of the instrument, the need to use a long life, data preservation security period of long memory, and ultimately identified the FRAM GX85RS2MC, the FRAM configuration for 16,384 × 8-bit, through the ferroelectric process and the silicon gate CMOS process technology to form a non-volatile storage unit and SRAM is different from the chip does not require a battery to maintain data.

The memory cell used in the GX85RS2MC can be used for 1 million read/write operations*1, and its read/write endurance greatly exceeds that of FLASH and EEPROM, and does not require a long time to write data, as is the case with FLASH or EEPROM, and it does not require a wait time.

The main parameters of GX85RS2MC are as follows:

- Capacity: 2M

- Interface type: SPI interface (mode 0 and mode 3)

- Operating voltage: 2.7v to 3.6v

- Operating frequency: 25MHz

- Power consumption: 4.2 mA 

- Low power consumption: 9 mA (standby)

- Data retention: 10 years @ 85°C (200 years @ 25°C)

- High-speed read characteristics: support 40MHz high-speed read command

- Operating ambient temperature range: -40°C to 85°C

- Package: 8-pin SOP package, RoHS compliant