FRAM GX85RS2MC (FM25V20A) in Data Acquisition Systems

In the design process of electronic products, it is very important to judge the quality of the product and whether it can be used continuously. Aging failure is an important step in the factory inspection of electronic product design, which is directly related to whether the product can be supplied to customers to use.

 

Most of the product aging process has strict regulations, the need for product indicators have detailed records, and because the aging cycle is generally longer, which the original data need to ensure that the query at any time and to ensure that power loss is not lost. Therefore, the choice of data memory is very important.

 

Features and advantages of ferroelectric memory GX85RS2MC:

1, GX85RS2MC configuration of 16,384 × 8-bit, through the ferroelectric process and silicon gate CMOS process technology to form a non-volatile storage unit, and SRAM is different, the chip does not require a battery to maintain data, effectively improving data security.

 

2, any sector programmed erase cycle typical value of up to 1 million times, the data retention period of 25 years typical value, can fully meet the product reliability requirements;

 

3, the maximum power consumption of 5mA, the maximum standby current is only 10μA, can effectively reduce power consumption, extend the detector battery life;

 

4, GX85RS2MC support SPI serial interface, maximum 25MHz operating frequency, can meet the master chip fast communication needs;

 

5, GX85RS2MC operating voltage of 2.7V to 3.6V, standby power consumption of only 7μA, fully meet the system‘s low-power requirements, and the operating temperature range is -40 ℃ to 85 ℃, in more scenarios can also ensure the stability of data read and write.

 

6, the use of SOP8 small package, save PCB board design space, easy to layout;

 

7, compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);