FRAM GX85RS2MC Compatible with FM25V20A in Vehicle Electronic Control Systems

As we all know, FRAM is a kind of ferroelectric random memory that combines the two specialties of non-volatile and random access that can retain data even in the case of power failure. The GXSC GX85RS2MC (FM25V20A) mentioned in this paper not only does not require a battery backup for data retention, but also has superior high-speed writing, high read/write endurance, and low-power consumption performance compared with traditional nonvolatile memories such as EEPROM and FLASH.

In-vehicle electronic control systems for access to various types of sensor data needs to continue to increase, so the demand for high-performance non-volatile memory technology is also increasingly high, because when the system in the data analysis or other data processing, only this type of memory to be able to reliably and without delay in the storage of the data collected by the sensor.

Ferroelectric memory is a non-volatile memory that is not only capable of high-speed random access, but also has high write resistance, so it can meet the needs of such applications with optimal performance.

GX85RS2MC has the advantages of fast read/write speed (up to 1,000,000 times), long write life, and low write power consumption.

2, GX85RS2MC lowest power consumption of 9 microamps (standby), the operating voltage of 2.7 volts to 3.6 volts, can be in the -40 ℃ -85 ℃ temperature range.

3, GX85RS2MC capacity of 2M bit, provide SPI interface, operating frequency of 25 megahertz, and support 40MHz high-speed read command.

4, GX85RS2MC operating ambient temperature range -40 ℃ to 85 ℃, the package is an 8-pin SOP package, RoHS compliant; performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress).