GXSC FRAM GX52RS2MC Compatible with FM25V20A in Vehicle Electronic Control Systems

As the demand for accessing various types of sensor data for vehicle electronic control systems continues to increase, the demand for high-performance non-volatile memory technology is also increasingly high, because when the system is analyzing data or other data processing, only this type of memory can reliably and without delay to store the data collected by the sensor.

Ferroelectric memory is a non-volatile memory that not only provides high-speed random access, but also has high write resistance, thus providing the best performance for these applications.

GX85RS2MC(FM25V20A) performance advantages and application characteristics:

1, GX85RS2MC configuration of 262,144 × 8 bits, is through the ferroelectric process and silicon gate CMOS process technology to form a non-volatile memory cell, the chip does not require a battery to maintain data.

2, GX85RS2MC has the advantages of fast read/write speed (up to 1,000,000 times), long write life and low write power consumption.

3, GX85RS2MC lowest power consumption of 9 microamps (standby), the operating voltage of 2.7 volts to 3.6 volts, can be in the temperature range of -40 ℃ to 85 ℃ work.

4, GX85RS2MC capacity 2M bit, provide SPI interface, operating frequency 25 megahertz, and support 40MHz high-speed read command.

5, GX85RS2MC operating ambient temperature range -40 ° C to 85 ° C, the package is an 8-pin SOP package, RoHS compliant; performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress).