Easily Replaceable with SRAM GX85RS2MC, Compatible with MB85RS2MT

Traditional SRAM is a volatile memory, which means it requires constant power to maintain the data in it; once power is lost, the data is lost. In contrast, non-volatile memories such as flash memory can hold data without power.SRAM-compatible non-volatile memories can be made non-volatile by means of ferroelectric memories (FRAM).The FRAM ferroelectric process and silicon-gate CMOS process technology form a non-volatile memory cell, a material that can maintain its state even after a power failure.

Ferroelectric memories are memories with non-volatile and random access characteristics, where non-volatility allows for data retention in the event of a power failure and random access enables fast data writing. Because ferroelectric memory can safely store data being written during power failures and power outages, parameter information and log data recorded in the device can be secured. Applications using ferroelectric memory products are already widely used in fields such as factory automation, measurement equipment, ATMs and medical equipment.

When the program uses SRAM to record data, it needs to be equipped with a backup battery that prevents sudden power outages. Since ferroelectric memories are characterized by non-volatile, high-speed read/write per byte, and high read/write endurance, the solution eliminates the need for a battery by replacing SRAM with ferroelectric memories. Eliminating the battery not only reduces component costs and battery maintenance costs, but also helps optimize product size.

GX85RS2MC Performance Parameters Introduction:

- Capacity: 2M bit, SPI interface is provided;

- The operating frequency is 25 MHz;

- High-speed read characteristics: supports 40MHz high-speed read command;

- Operating ambient temperature range: -40℃ to 85℃;

- Package: 8-pin SOP package, RoHS compliant;

- Performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);