GX85RS2MC Replaces FM25V20A for Multi-function Anemometer
Time:2024-05-22
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The new multifunctional anemometer must have the function of real-time saving time and corresponding measurement data while measuring wind speed; the choice of external memory is also various, and the most widely used ones are SRAM with battery backup, EEPROM and NVRAM, but the SRAM battery backup method increases the complexity of the hardware design and reduces the reliability of the system; The EEPROM method can be written fewer times (about 100,000 times), and the write operation time is longer (about 10ms). Therefore more and more designers are focusing on the new ferroelectric memory.
The GXSC GX85RS2MC, with a configuration of 262,144 × 8 bits, is formed by a ferroelectric process and a silicon gate CMOS process technology to form a non-volatile memory cell and SRAM Unlike SRAM, the chip does not require a battery to hold data. Its read/write durability greatly exceeds that of FLASH and EEPROM, with advanced write-protection design, including hardware protection and software protection dual protection function.

GX85RS2MC Features:
- Operating frequency is 25 MHz;
- High-speed read characteristics: Supports 40MHz high-speed read commands;
- Operating voltage: 2.7V-3.6V;
- Power consumption 4.8 mA, standby power consumption 9 microamps;
- Operating ambient temperature range: -40℃ to 85℃;
- Package: 8-pin SOP package, RoHS compliant;
- Performance compatible with FM25V20A;
With the increase of GXSC‘s ferroelectric memory capacity and the price advantage, ferroelectric memory will gradually become a mainstream memory, which is commonly used in instrumentation, industrial control, digital home appliances and communication products, etc. Moreover, GXSC can provide long-term stable supply and technical support.