FRAM GX85RS2MC Replaces FM25V20A (Cypress) for Automotive Instrument Clusters

The design of automotive systems is becoming increasingly complex due to the constant incorporation of new features such as advanced driver assistance, graphical instrumentation, body control and vehicle infotainment systems. To ensure reliable and safe operation, each subsystem requires the use of specific non-volatile memories that facilitate the storage of information during reset operations and power switching. Non-volatile memory is used to store important data such as executable code or constant data, calibration data, safety performance and protective safety-related information for future retrieval.

1, the automotive instrument panel on the memory requirements of the car is the instrument panel system is in digital form on a graphical display of speed, RPM, fuel oil level and engine temperature and other important information, or using stepper motor control of the analog form of display. In addition, the instrument cluster system displays battery warnings, temperature warnings, low oil pressure warnings, brake warnings, seatbelt status signs, low tire pressure signs, door lock signs, headlight signs, gearshift indications, handbrake status indications, as well as interior and exterior temperatures and odometer readings.

Therefore, it is important to record real-time data and store it in non-volatile memory. In addition to meeting the needs of the application, non-volatile memory also needs to ensure that enough read and write times to record at least 20 years of data.

2, automotive dashboard can use FRAM GX85RS2MC compared to traditional EEPROM non-volatile memory has more advantages, no write wait time, almost real-time storage of important data, which is very important for automotive dashboards, EEPROM usually requires more than 10 milliseconds of write wait time, and therefore does not apply to high-security applications.

The GX85RS2MC has the advantages of fast read/write speed (1 million times), long write life and low write power consumption. It has a 2M bit capacity, provides an SPI interface, operates at 25 megahertz, and supports 40MHz high-speed read commands. The chip configuration of 262,144 × 8 bits, is through the ferroelectric process and silicon gate CMOS process technology to form a non-volatile storage unit, without the need for batteries to maintain data, industrial-grade temperature range -40 ° C to 85 ° C, fully meet the automotive application environment.

3, FRAM GX85RS2MC Performance Parameters Introduction:

- Power consumption: 4.8 mA, standby power consumption 9 microamps

- Operating voltage 2.7V to 3.6V

- High-speed read characteristics: support for 40MHz high-speed read command

- 8-pin SOP wide-body 208 mil package, RoHS compliant

- Performance Compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress).