Multi-axis controller available with ferroelectric memory GX85RS2MC, compatible with MB85RS2MT/FM25V20A

In the field of modern industrial automation and intelligent manufacturing, multi-axis motion controllers have become the core equipment for realizing precise motion control. Through advanced algorithms, real-time monitoring and flexible programming capabilities, multi-axis motion controllers are able to efficiently manage multiple axes of motion to ensure the precise coordination and operation of complex mechanical systems. In CNC machine tool applications, multi-axis motion controllers are used to control the movement of tools and workpieces to improve machining quality, accuracy and efficiency.

 

Multi-axis motion controllers have real-time performance that enables them to respond quickly to control commands and adjust motion parameters in real time to ensure high accuracy even during high-speed operation. The ferroelectric memory GX85RS2MC features high speed, low power consumption, and high durability that are difficult to achieve with conventional FLASH memories and EEPROMs, and can be used in multi-axis controllers to record parameters and setting information in real time.

 

The GX85RS2MC has a capacity of 2M bit, using a memory cell that can be used for 1E11 read/write operations, and data retention: 10 years @ 85°C (200 years @ 25°C); it operates in an ambient temperature range of -40°C to 85°C, which is in line with application scenarios for industrial-grade products for multi-axis controllers.

 

GX85RS2MC Performance Parameters Introduction:

- Capacity: 2M bit, SPI interface is provided;

- The operating frequency is 25 MHz;

- High-speed read characteristics: supports 40MHz high-speed read command;

- Operating ambient temperature range: -40℃ to 85℃;

- Package: 8-pin SOP package, RoHS compliant;

- Performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);

 

Summary: GXSC ferroelectric memories are more compatible with SPI and IIC interfaces, making them easy to integrate with other hardware devices in the system. It enables system developers to easily embed the ferroelectric memory into the system, reducing the complexity and time cost of system development.