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Key Applications of Ferroelectric Memory GX85RS2MC/GX85RC512 in AI Edge Computing

Time:2025-03-12 Views:267
Artificial intelligence (AI) technology breakthroughs are profoundly changing all areas of society, but with the increased complexity of algorithms and the explosive growth of data volume, traditional storage architectures are gradually becoming the bottleneck of AI development. Ferroelectric memory, with its non-volatile, high-speed read/write, and low-power features, is becoming a key enabling technology in the field of AI, driving the evolution of computing architectures in the direction of greater efficiency and intelligence.
The ferroelectric memory GX85RS2MC/GX85RC512 is based on ferroelectric process and silicon gate CMOS process technology, combining the high-speed read/write capability of RAM with the non-volatility of ROM, and its core advantages include:
- Low power consumption: 4.5 mA and standby power consumption of only 1 µA, suitable for edge devices and mobile terminals.
- High-speed response: With a read/write speed of 1E11 read/write operations, its read/write durability greatly exceeds that of FLASH and EEPROM.
- Long life: data retention capacity is 10 years @ 85°C (200 years @ 25°C), and the stored data will not be lost under longer periods of harsh environmental conditions.
- High operating frequency: Their operating frequency is 25MHz, and they all support 40MHz high-speed read command, which can meet some application scenarios with higher requirements on data reading and writing speed.
- Small size package: Supporting SOP8 150mil package and SOP8 208mil package, they have the advantages of small size, easy installation and soldering, which can save the space of PCB board.

In edge devices, such as smart cameras and drones, the ferroelectric memory GX85RS2MC/GX85RC512 can replace MB85RS2M/FM25V20 and MB85RC512/FM24C512 for localized storage of AI model parameters. For example, by solidifying the CNN model weights in the ferroelectric memory, the device does not need to access the external storage frequently, dramatically reducing the latency and decreasing the data transmission energy consumption.