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GX85RS2MC Compatible MB85RS2MT in New Energy Vehicle BMS Application

Time:2025-02-25 Views:309
In recent years, the rapid growth of new energy vehicle sales has led to the development of the related automotive electronics industry chain. Due to the use of electric power drive, the structure of new energy vehicles is different from that of traditional fuel vehicles, and the three systems of power battery, battery management system (BMS), and vehicle control unit (VCU) have become the core functional components of the automobile. These key components generate characteristic data all the time, and high-performance memory has become an indispensable key component for these core components.

Whether it is BMS or VCU, these systems need to monitor, record, and analyze the current status information in real time and continuously, so it is necessary to improve the memory performance and durability design. GXSC non-volatile, high-speed read/write and high read/write endurance GX85RS2MC ferroelectric memories well meet these requirements for reliability and no latency.
GX85RS2MC is formed through the ferroelectric process and silicon gate CMOS process technology of non-volatile memory cell, which has high reliability, data retention time of 100 years, completely random without write wait for high read/write efficiency, SPI interface rate can support up to 25Mhz operating frequency, and has a very low power consumption; due to its special ferroelectric material, the memory‘s Due to its special ferroelectric material, the memory can be erased or written up to 1E6 read/write operations*1.

The GX85RS2MC has a capacity of 2M bit and is packaged in an 8-pin SOP package that is PIN TO PIN compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress). With a minimum power consumption of 9 microamps (standby) and an operating voltage of 2.7V to 3.6V, it can be operated in a temperature range of -40°C to 85°C.

In summary, ferroelectric memory is currently the best memory choice for realizing high-reliability BMS systems, both in terms of write speed, endurance, and power consumption and reliability.