GXSC FRAM GX85RS2MC (MB85RS2MT) Widely Used in Edge Computing

Edge computing in the IoT is currently gaining momentum through the addition of mobile devices with artificial intelligence (AI), where much of the sensed data or parameters are frequently rewritten to the memory installed onboard such devices. Faster IoT promotes more frequent data updates, so memory with high read and write endurance is also needed here.

The GXSC FRAM GX85RS2MC can be used to store data generated by edge devices, such as sensor data, image data, and so on. Its fast read/write and non-volatile characteristics make it suitable for real-time data storage and processing in edge computing environments. In edge computing, FRAM GX85RS2MC can be used as a cache for storing frequently used data to improve data access speed and system performance.

In addition edge computing often requires real-time control of devices, the FRAM GX85RS2MC can be used to store control parameters and real-time data for fast response and precise control.The core technology of the GX85RS2MC is the ferroelectric process and the silicon gate CMOS process technology to form a non-volatile memory cell, which doesn‘t need a battery to hold data, and it operates at a voltage range of 2.7V to 3.6V, with a minimum standby power consumption of only 9 microamps, it can instantly save data at low current to ensure the security of information in the system.

GX85RS2MC performance parameters are as follows:

- Capacity: 2M;

- Interface type: SPI interface;

- Operating frequency: 25MHz;

- Data retention: 10 years @ 85℃ (200 years @ 25℃);

- High-speed read characteristics: support 40MHz high-speed read command;

- Operating ambient temperature range: -40℃ to 85℃;

- Package: 8-pin SOP package, RoHS compliant;

- Performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);