GXSC GX85RS2MC applied in airflow monitoring system, replacing MB85RS2MT

At present, in some large-scale ventilation systems, a large amount of airflow data is generated every second, and the airflow monitoring system needs to collect and record the airflow data in real time. The ferroelectric memory can quickly store these data to ensure the timeliness and completeness of the data, and it can efficiently complete the task of data storage without affecting the normal operation of the system. This paper mainly introduces the application of GXSC FRAM GX85RS2MC in the wind volume monitoring system.

The wind monitoring system also needs certain data backup and recovery functions. The non-volatile characteristics of the ferroelectric memory GX85RS2MC enable it to reliably save the stored data and avoid data loss in the event of a sudden power outage or failure of the system. When the system returns to normal, the backup data can be quickly read from the ferroelectric memory to continue monitoring and analyzing, guaranteeing the continuity and reliability of system data.

The core technology of GXSC ferroelectric memory GX85RS2MC is ferroelectric process and silicon gate CMOS process technology to form a non-volatile storage unit. It has an operating voltage range of 2.7V to 3.6V and a minimum standby power consumption of only 9 microamps, which enables reliable and delay-free data storage at low currents and prevents data loss after power-down.

GX85RS2MC Performance Parameters Introduction:

- Capacity: 2M bit, SPI interface is provided;

- The operating frequency is 25 MHz;

- High-speed read characteristics: support 40MHz high-speed read command;

- Operating ambient temperature range: -40℃ to 85℃;

- Package: 8-pin SOP package, RoHS compliant;

- Performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);

Summary: The GXSC ferroelectric memory has good compatibility with SPI and IIC interfaces, making it easy to integrate with other hardware devices in the airflow monitoring system. It makes it easy for system developers to embed the ferroelectric memory into the system to realize the data storage function, which reduces the complexity and time cost of system development.